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 1.方向壓降高，暗光
1 direction high pressure drop, dark
A：一種是電極與發光資料為歐姆觸摸，但觸摸電阻大，首要由資料襯底低濃度或電極殘缺所形成的。
A: one is the electrode and the light-emitting material for the ohm touch, but touch resistance is large, mainly by the data base of low concentration or electrode formed by the.
B：一種是電極與資料為非歐姆觸摸，首要發生在芯片電極制備進程中蒸騰第一層電極時的擠壓印或夾印，散布方位。
B: one is the electrode and the data for non ohmic touch, the first occurred in the process of chip electrode preparation in the first layer of the electrode during the evaporation of the printing or printing, dispersion direction.
其他封裝進程中也也許形成正向壓降變，首要因素有銀膠固化不充分，支架或芯片電極沾污等形成觸摸電阻大或觸摸電阻不穩定。
Other packaging process may also lead to the formation of a positive pressure drop, the primary factor is not sufficient curing of silver glue, stent or chip electrode contamination, such as the formation of large touch resistance or touch resistance instability.
正向壓降變的芯片在固定電壓測驗時，經過芯片的電流小，然后體現暗點，還有一種暗光景象是芯片自身發光功率低，正向壓降正常。
The forward voltage drop at a fixed voltage test chip, the chip after a small current, and then reflect the scotoma and a dark scene is self luminous chip low power forward voltage drop to normal.
2.難壓焊：(首要有打不粘，電極掉落，打穿電極)
2 difficult to press welding: (the first to play non stick, electrode drop, hit the electrode)
A：打不粘：首要因為電極外表氧化或有膠
A: Non Stick: mainly because the surface of the electrode oxidation or glue
B：有與發光資料觸摸不牢和加厚焊線層不牢，其間以加厚層掉落為主。
B: there is no touch with the light-emitting material and thick welding line layer is not thick, during which the thick layer of the main drop.
C：打穿電極：通常與芯片資料有關，資料脆且強度不高的資料易打穿電極，通常GAALAS資料(如高紅，紅外芯片)較GAP資料易打穿電極，
C: through the electrode: usually associated with the chip data, the data is brittle and the strength of the material is not easy to hit the electrode, usually GAALAS data (such as high red, infrared chip) than the GAP data is easy to hit the electrode,
D：壓焊調試應從焊接溫度，超聲波功率，超聲時刻，壓力，金球巨細，支架定位等進行調整。
D: pressure welding debugging should be welding temperature, ultrasonic power, ultrasonic time, pressure, the size of the ball, stent positioning, etc..
3.發光色彩區別：
3 luminous color difference:
A：同一張芯片發光色彩有顯著區別首要是因為外延片資料疑問，ALGAINP四元素資料選用量子結構很薄，成長是很難保證各區域組分共同。(組分決議禁帶寬度，禁帶寬度決議波長)。
A: the same chip light-emitting color has a significant difference is mainly due to the epitaxial film data query, ALGAINP four element data selection of quantum structure is very thin, it is difficult to ensure that the growth of regional components of common. Resolution of the forbidden band width of the forbidden band.
B：GAP黃綠芯片，發光波長不會有很大誤差，但是因為人眼對這個波段色彩靈敏，很簡單查出偏黃，偏綠。因為波長是外延片資料決議的，區域越小，呈現色彩誤差概念越小，故在M/T工作中有附近選取法。
B:GAP yellow green chip, the luminous wavelength will not be a big error, but because of the color of the band sensitive to the human eye, it is easy to identify the yellowish, partial green. Because the wavelength is the resolution of the epitaxial wafer, the smaller the area, the smaller the concept of color error, so there is a near selection method in M/T work.
C：GAP赤色芯片有的發光色彩是偏橙黃色，這是因為其發光機理為直接躍進。受雜質濃度影響，電流密度加大時，易發生雜質能級偏移和發光飽滿，發光是開端變為橙黃色。
C:GAP red chip some luminous color is partial orange yellow, this is because of its luminous mechanism for direct leap. Affected by the concentration of impurities, the current density increases, prone to impurity level shift and full of light, light is the beginning of the orange yellow.
4.閘流體效應;
4 gate fluid effect;
A：是發光二極管在正常電壓下無法導通，當電壓加高到必定程度，電流發生驟變。
A: is a light emitting diode to guide in the normal voltage, when the voltage is high to a certain level, the current changes happened.
B：發生閘流體景象因素是發光資料外延片成長時呈現了反向夾層，有此景象的LED在IF=20MA時測驗的正向壓降有躲藏性，在使用進程是出于兩極電壓不夠大，體現為不亮，可用測驗信息儀器從晶體管圖示儀測驗曲線，也能夠經過小電流IF=10UA下的正向壓降來發現，小電流下的正向壓降顯著偏大，則也許是該疑問所形成的。
B: the thyristor sight factor is the luminous data show the inverse epitaxial wafer growth interlayer, this picture of the LED in IF=20MA when the forward voltage drop from test, in the process of use for two voltage is not big enough, not bright, available test instrument information graphic instrument test curve from the crystal tube, can to find after IF=10UA low current forward voltage drop, low current voltage drop significantly larger, it may be formed by the doubt.
5.反向漏電：
5 reverse leakage:
A：因素：外延資料，芯片制造，器材封裝，測驗通常5V下反向漏電流為10UA，也能夠固定反向電流下測驗反向電壓。
A: factors: epitaxial data, chip manufacturing, packaging equipment, test the reverse leakage current is usually 5V 10UA, can also be fixed reverse current reverse voltage test.
B：不同類型的LED反向特性相差大：普綠，普黃芯片反向擊穿可到達一百多伏，而普芯片則在十幾二十伏之間。
B LED: the reverse characteristics of different types of the big difference: Pu Pu green, yellow chip breakdown can reach more than and 100 volts, and general chip in ten volts.
C：外延形成的反向漏電首要由PN結內部結構缺點所形成的，芯片制造進程中旁邊面腐蝕不夠或有銀膠絲沾附在測面，嚴禁用有機溶液分配銀膠。以避免銀膠經過毛細景象爬到結區。
C: the formation of reverse leakage is mainly formed by the internal defects of the internal structure of the PN junction, the chip manufacturing process in the next side of the corrosion is not enough or silver glue wire attached to the surface, it is prohibited to use organic solution distribution of silver glue. In order to avoid the silver glue to climb to the junction area.

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